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RJK6020DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1465-0200 Rev.2.00 Sep 21, 2006
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 600 30 32 96 32 96 8.5 3.9 200 0.625 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
Rev.2.00 Sep 21, 2006 page 1 of 6
RJK6020DPK
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.155 5150 480 52 55 100 176 100 121 28 50 0.88 520 Max -- 1 0.1 4.5 0.175 -- -- -- -- -- -- -- -- -- -- 1.50 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 16 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 16 A VGS = 10 V RL = 18.8 Rg = 10 VDD = 480 V VGS = 10 V ID = 32 A IF = 32 A, VGS = 0 Note4 IF = 32 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00 Sep 21, 2006 page 2 of 6
RJK6020DPK
Main Characteristics
Power vs. Temperature Derating
400 1000 100
1m s
10
Maximum Safe Operation Area
Pch (W)
300
ID (A)
10 1 0.1
DC Operation (Tc = 25C) PW = 10 ms (1shot)
10 s 0 s
Channel Dissipation
200
Drain Current
100
Operation in this area is limited by 0.01 RDS(on)
0
50
100
150
200
0.001 0.1
Ta = 25C
1
10
100
1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 6V 5.8 V 8 V, 10V 5.6 V 100 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
40
20 10 5 2 1 0.5 0.2 0.1 Tc = 75C 25C -25C 0 2 4 6 8 10
30
Drain Current
5.4 V 20 5.2 V 10 Pulse Test 0 4 8 12 16 20
VGS = 5 V
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source on State Resistance RDS(on) ()
1 VGS = 10 V 0.5
Static Drain to Source on State Resistance RDS(on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
0.5 VGS = 10 V
0.4 16 A 0.3 ID = 32 A 10 A
0.2 0.1 0.05
0.2
0.1 Pulse Test 0 -25 0 25 50 75 100 125 150
0.02 0.01 1 3 10 30 Pulse Test 100 300 1000
Drain Current
ID (A)
Case Temperature
Tc (C)
Rev.2.00 Sep 21, 2006 page 3 of 6
RJK6020DPK
Body-Drain Diode Reverse Recovery Time
1000 100000 30000 VGS = 0 f = 1 MHz Ciss
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 di / dt = 100 A / s VGS = 0, Ta = 25C
Capacitance C (pF)
10000 3000 1000 300 100 30 10 0 100
Coss
Crss
200
300
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V) VGS (V)
800
Reverse Drain Current vs. Source to Drain Voltage
16 50
600 VDS 400
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
VDD = 100 V 300 V 480 V
IDR (A)
ID = 32 A
VGS
Pulse Test 40
12
30
8
20 10
200
VDD = 480 V 300 V 100 V 40 80 120 160
4
5, 10 V
VGS = 0, -5 V 0.8 1.2 1.6 2.0
0 0 200
0
0.4
Gate Charge
Qg (nC)
Source to Drain Voltage
VSD (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5 VDS = 10 V 4 ID = 10 mA 1 mA 3 0.1 mA
Gate to Source Cutoff Voltage VGS(off) (V)
2
1 0 -25
0
25
50
75
100 125 150
Case Temperature
Tc (C)
Rev.2.00 Sep 21, 2006 page 4 of 6
RJK6020DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 0.625C/W, Tc = 25C PDM D= PW T 1m 10 m 100 m 1 10 PW T
0.05
0.03
0.02 1 0.0
0.01 10
1s
t ho
pu
lse
100
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 300 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10%
90% td(on) tr
90% td(off) tf
Rev.2.00 Sep 21, 2006 page 5 of 6
RJK6020DPK
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name RJK6020DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 21, 2006 page 6 of 6
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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